Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors

  • Satyaki Ganguly, Aniruddha Konar, Zongyang Hu, Huili Xing, Debdeep Jena
  • Applied Physics Letters, December 2012, American Institute of Physics
  • DOI: 10.1063/1.4773244

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http://dx.doi.org/10.1063/1.4773244

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