Direct observation of substitutional Ga after ion implantation in Ge by means of extended x-ray absorption fine structure

S. Decoster, B. Johannessen, C. J. Glover, S. Cottenier, T. Bierschenk, H. Salama, F. Kremer, K. Temst, A. Vantomme, M. C. Ridgway
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4773185