Room-temperature sign reversed spin accumulation signals in silicon-based devices using an atomically smooth Fe3Si/Si(111) contact

Y. Fujita, S. Yamada, Y. Ando, K. Sawano, H. Itoh, M. Miyao, K. Hamaya
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4773072