New insights in the passivation of high-k/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of crystal orientation

Min Xu, Jiangjiang J. Gu, Chen Wang, D. M. Zhernokletov, R. M. Wallace, Peide D. Ye
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4772944
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