Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

G. Capellini, G. Kozlowski, Y. Yamamoto, M. Lisker, C. Wenger, G. Niu, P. Zaumseil, B. Tillack, A. Ghrib, M. de Kersauson, M. El Kurdi, P. Boucaud, T. Schroeder
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4772781