Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes

  • Yue Lin, Yong Zhang, Zhiqiang Liu, Liqin Su, Jihong Zhang, Tongbo Wei, Zhong Chen
  • Applied Physics Letters, December 2012, American Institute of Physics
  • DOI: 10.1063/1.4772549

Interpaly of extended defect, point defects, and localization on InGaN LED EQE droop

What is it about?

Spatially resolved study of EQE droop in InGaN LEDs, allowing unambiguous comparison of different characteristic types of droop on the same device.

Why is it important?

LED efficiency droop is mostly an extrinsic effect (e.g., defects) rather than intrinsic (e.g., Auger).

Read Publication

http://dx.doi.org/10.1063/1.4772549

The following have contributed to this page: Yong Zhang