Growth of ∼5 cm2V−1s−1 mobility, p-type Copper(I) oxide (Cu2O) films by fast atmospheric atomic layer deposition (AALD) at 225°C and below

D. Muñoz-Rojas, M. Jordan, C. Yeoh, A. T. Marin, A. Kursumovic, L. A. Dunlop, D. C. Iza, A. Chen, H. Wang, J. L. MacManus Driscoll
  • AIP Advances, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4771681

Highly conducting Cu2O films deposited by low temperature scalable method

What is it about?

Cu2O is a semiconductor with multiple applications on either hard substrates or plastic. A non-vacuum, low temperature growth technique would be highly desirable for these applications, but none currently exists. Here we use a novel and fast deposition techniquem, atmospheric atomic layer deposition (AALD), to fabricate Cu2O films at < 225°C on glass and plastic with remarkable transport properties,

Why is it important?

Compared to conventional ALD, the precursor chemicals used in AALD are separated in space rather than in time thus making the technique much faster, with potential also for roll-to-roll coating. The growth rate obtained was two orders of magnitude higher than for conventional ALD. Carrier mobilities of 5 cm2V-1s-1 and carrier concentrations of ~1016 cm-3 were achieved in films of thickness 50 - 120 nm, in over >10 cm2 areas.

The following have contributed to this page: David Muñoz-Rojas