Origin of the redshift of the luminescence peak in InGaN light-emitting diodes exposed to Co-60 γ-ray irradiation

Y. L. Li, X. J. Wang, S. M. He, B. Zhang, L. X. Sun, Y. D. Li, Q. Guo, C. Q. Chen, Z. H. Chen, W. Lu
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4770465