Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

Moon-Seok Kim, Young Hwan Hwang, Sungho Kim, Zheng Guo, Dong-Il Moon, Ji-Min Choi, Myeong-Lok Seol, Byeong-Soo Bae, Yang-Kyu Choi
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4770073