Significant increase in conduction band discontinuity due to solid phase epitaxy of Al2O3 gate insulator films on GaN semiconductor

S. Toyoda, T. Shinohara, H. Kumigashira, M. Oshima, Y. Kato
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4769818
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