Electrically active Er doping in InAs, In0.53Ga0.47As, and GaAs

  • Peter G. Burke, Lars Ismer, Hong Lu, Elan Frantz, Anderson Janotti, Chris G. Van de Walle, John E. Bowers, Arthur C. Gossard
  • Applied Physics Letters, December 2012, American Institute of Physics
  • DOI: 10.1063/1.4769248

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http://dx.doi.org/10.1063/1.4769248

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