Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory

Yao-Feng Chang, Pai-Yu Chen, Burt Fowler, Yen-Ting Chen, Fei Xue, Yanzhen Wang, Fei Zhou, Jack C. Lee
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4769218
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