Identification of defect types in moderately Si-doped GaInNAsSb layer in p-GaAs/n- GaInNAsSb/n-GaAs solar cell structure using admittance spectroscopy

Katsuhiro Akimoto, Yoshitaka Okada, Muhammad Monirul Islam, Naoya Miyashita, Nazmul Ahsan, Takeaki Sakurai
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4768716
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The following have contributed to this page: Muhammad Islam and Nazmul Ahsan