Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

  • F. C.-P. Massabuau, S.-L. Sahonta, L. Trinh-Xuan, S. Rhode, T. J. Puchtler, M. J. Kappers, C. J. Humphreys, R. A. Oliver
  • Applied Physics Letters, November 2012, American Institute of Physics
  • DOI: 10.1063/1.4768291

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http://dx.doi.org/10.1063/1.4768291

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