Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer

P. Chen, M. X. Feng, D. S. Jiang, D. G. Zhao, Z. S. Liu, L. Li, L. L. Wu, L. C. Le, J. J. Zhu, H. Wang, S. M. Zhang, H. Yang
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4768287