Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy

David Cooper, Thibaud Denneulin, Jean-Paul Barnes, Jean-Michel Hartmann, Louis Hutin, Cyrille Le Royer, Armand Béché, Jean-Luc Rouvière
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4767925
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