Effect of heterostructure design on current-voltage characteristics in AlxGa1−xN/GaN double-barriers resonant tunneling diode

M. Boucherit, A. Soltani, M. Rousseau, J.-L. Farvacque, J.-C. DeJaeger
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4767382