Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures

Yoshitaka Nakano, Yoshihiro Irokawa, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4767367
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