Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

  • Tamara Rudenko, Alexey Nazarov, Isabelle Ferain, Samaresh Das, Ran Yu, Sylvain Barraud, Pedram Razavi
  • Applied Physics Letters, November 2012, American Institute of Physics
  • DOI: 10.1063/1.4767353

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http://dx.doi.org/10.1063/1.4767353

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