Indium incorporation efficiency and critical layer thickness of (202¯1) InGaN layers on GaN

  • Simon Ploch, Tim Wernicke, Martin Frentrup, Markus Pristovsek, Markus Weyers, Michael Kneissl
  • Applied Physics Letters, November 2012, American Institute of Physics
  • DOI: 10.1063/1.4767336

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

http://dx.doi.org/10.1063/1.4767336

The following have contributed to this page: Prof. Dr. Markus Weyers