1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates

K. Gallacher, P. Velha, D. J. Paul, S. Cecchi, J. Frigerio, D. Chrastina, G. Isella
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4767138
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