High-mobility p-channel metal-oxide-semiconductor field-effect transistors on Ge-on-insulator structures formed by lateral liquid-phase epitaxy

Yuichiro Suzuki, Shimpei Ogiwara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4766917