Interface engineering between metal electrode and GeO2 dielectric for future Ge-based metal-oxide-semiconductor technologies

  • Shingo Ogawa, Iori Hideshima, Yuya Minoura, Takashi Yamamoto, Asami Yasui, Hiroaki Miyata, Kosuke Kimura, Toshihiko Ito, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
  • Applied Physics Letters, November 2012, American Institute of Physics
  • DOI: 10.1063/1.4766745

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http://dx.doi.org/10.1063/1.4766745

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