Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory

Yanzhen Wang, Burt Fowler, Yen-Ting Chen, Fei Xue, Fei Zhou, Yao-Feng Chang, Jack C. Lee
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4765356
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