Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

T. Hofmann, P. Kühne, S. Schöche, Jr-Tai Chen, U. Forsberg, E. Janzén, N. Ben Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, V. Darakchieva
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4765351