Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Y. Zhu, N. Jain, S. Vijayaraghavan, D. K. Mohata, S. Datta, D. Lubyshev, J. M. Fastenau, Amy K. Liu, N. Monsegue, M. K. Hudait
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4764880
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