Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

Benjamin Reuters, M. Finken, A. Wille, B. Holländer, M. Heuken, H. Kalisch, A. Vescan
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4764342