The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains

Thibaud Denneulin, David Cooper, Jean-Michel Hartmann, Jean-Luc Rouviere
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4764045
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