Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition

Y. H. Chang, C. A. Lin, Y. T. Liu, T. H. Chiang, H. Y. Lin, M. L. Huang, T. D. Lin, T. W. Pi, J. Kwo, M. Hong
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4762833
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