Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy

S. Hosseini Vajargah, S. Ghanad-Tavakoli, J. S. Preston, G. A. Botton, R. N. Kleiman
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4761970