Strain and defects in Si-doped (Al)GaN epitaxial layers

Kamran Forghani, Lukas Schade, Ulrich T. Schwarz, Frank Lipski, Oliver Klein, Ute Kaiser, Ferdinand Scholz
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4761815
The author haven't yet claimed this publicationThe author haven't yet claimed this publication