Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors

Patrick Fiorenza, Filippo Giannazzo, Alessia Frazzetto, Fabrizio Roccaforte
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4759354