Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

Rena Suzuki, Noriyuki Taoka, Masafumi Yokoyama, Sang-Hyeon Kim, Takuya Hoshii, Tatsuro Maeda, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4759329