Annealing studies of heteroepitaxial InSbN on GaAs grown by molecular beam epitaxy for long-wavelength infrared detectors

Nimai C. Patra, Sudhakar Bharatan, Jia Li, Shanthi Iyer
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4759321
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