The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells

J. L. M. Oosthoek, D. Krebs, M. Salinga, D. J. Gravesteijn, G. A. M. Hurkx, B. J. Kooi
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4759239