An accurate characterization of interface-state by deep-level transient spectroscopy for Ge metal-insulator-semiconductor capacitors with SiO2/GeO2 bilayer passivation

Dong Wang, Shuta Kojima, Keita Sakamoto, Keisuke Yamamoto, Hiroshi Nakashima
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4759139
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