Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy

  • Z. Zhang, C. A. Hurni, A. R. Arehart, J. S. Speck, S. A. Ringel
  • Applied Physics Letters, October 2012, American Institute of Physics
  • DOI: 10.1063/1.4759037

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http://dx.doi.org/10.1063/1.4759037

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