Electrical and microstructural analyses of 200 MeV Ag14+ ion irradiated Ni/GaN Schottky barrier diode

Ashish Kumar, A. Hähnel, D. Kanjilal, R. Singh
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4758929

microstructural (XTEM) analyses of 200MeV Ag ion irradiated Ni/GaN Schottky barrier diode

What is it about?

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Why is it important?

SHI irradiation effects have been studied using XTEM

The following have contributed to this page: Ashish Kumar