Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement

Jae Woo Lee, Doyoung Jang, Mireille Mouis, Kiichi Tachi, Gyu Tae Kim, Thomas Ernst, Gérard Ghibaudo
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4756910
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