The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes

  • Roy B. Chung, Changseok Han, Chih-Chien Pan, Nathan Pfaff, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • Applied Physics Letters, September 2012, American Institute of Physics
  • DOI: 10.1063/1.4756791

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http://dx.doi.org/10.1063/1.4756791

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