Response to “Comment on ‘Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses’” [J. Appl. Phys. 112, 076101 (2012)]

G. W. Paterson, A. R. Long
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4756043