Comment on “Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses” [J. Appl. Phys. 110, 114115 (2011)]

A. F. Basile, P. M. Mooney
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4756042