Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation

Takuya Hoshii, Sunghoon Lee, Rena Suzuki, Noriyuki Taoka, Masafumi Yokoyama, Hishashi Yamada, Masahiko Hata, Tetsuji Yasuda, Mitsuru Takenaka, Shinichi Takagi
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4755804
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