High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

H. P. Bhasker, S. Dhar, A. Sain, Manoj Kesaria, S. M. Shivaprasad
  • Applied Physics Letters, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4755775
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