Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures

  • Matthew T. Hardy, Erin C. Young, Po Shan Hsu, Daniel A. Haeger, Ingrid L. Koslow, Shuji Nakamura, Steven P. DenBaars, James S. Speck
  • Applied Physics Letters, September 2012, American Institute of Physics
  • DOI: 10.1063/1.4754693

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http://dx.doi.org/10.1063/1.4754693

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