Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures

P. Waltereit, W. Bronner, M. Musser, F. van Raay, M. Dammann, M. Cäsar, S. Müller, L. Kirste, K. Köhler, R. Quay, M. Mikulla, O. Ambacher
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4752257
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