Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors

Yuanjie Lv, Zhifang Cao, Yingxia Yu, Zhanguo Wang, Chongbiao Luan, Zhaojun Lin, Zhihong Feng, Lingguo Meng
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4752254