Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode

  • Rong Xuan, Wei-Hong Kuo, Chih-Wei Hu, Suh-Fang Lin, Jenn-Fang Chen
  • Applied Physics Letters, September 2012, American Institute of Physics
  • DOI: 10.1063/1.4752113

The authors haven't yet claimed this publication.

Read Publication


In partnership with:

Link to American Institute of Physics showcase