Effect of light Si-doping on the near-band-edge emissions in high quality GaN

L. C. Le, D. G. Zhao, D. S. Jiang, L. L. Wu, L. Li, P. Chen, Z. S. Liu, J. J. Zhu, H. Wang, S. M. Zhang, H. Yang
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4750043
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