Quantification of interfacial state density (Dit) at the high-k/III-V interface based on Hall effect measurements

D. Veksler, P. Nagaiah, T. Chidambaram, R. Cammarere, V. Tokranov, M. Yakimov, Y.-T. Chen, J. Huang, N. Goel, J. Oh, G. Bersuker, C. Hobbs, P. D. Kirsch, S. Oktyabrsky
  • Journal of Applied Physics, January 2012, American Institute of Physics
  • DOI: 10.1063/1.4749403
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